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TFDU4100
Vishay Semiconductors
Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation
Description
The TFDU4100 is an infrared transceiver module compliant with the IrDA standard for serial infrared (SIR) data communication, supporting IrDA speeds up to 115.2 kbit/s. The transceiver module consists of a PIN photodiode, an infrared emitter (IRED), and a low-power analog control IC to provide a total frontend solution in a single package. This SIR transceiver is using the small BabyFace package. The transceivers are capable of directly interfacing with a wide variety of I/O chips which perform the pulse-width modulation/demodulation function, including Vishay Semiconductors' TOIM4232. At a minimum, a cur-
18102
rent-limiting resistor in series with the infrared emitter and a VCC bypass capacitor are the only external components required to implement a complete solution.
Features
* Compliant to the IrDA physical layer specification (Up to 115.2 kbit/s), HP-SIR(R) and TV Remote Control e3 * 2.7 V to 5.5 V wide operating voltage range * Low Power Consumption (1.3 mA Supply Current) * Surface mount package - universal (L 9.7 mm x W 4.7 mm x H 4.0 mm) * Open collector receiver output, with 20 k internal pull-up. * BabyFace (Universal) package capable of surface mount solderability to side and to view orientation * Directly interfaces with various Super I/O and controller devices and Vishay Semiconductors's TOIM4232 I/O * Built-in EMI protection - no external shielding necessary * Few external components required * Split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs, US - Patent No. 6,157,476 * Compliant with IrDA background light specification * EMI Immunity in GSM Bands > 300 V/m verified * Lead (Pb)-free device * Device in accordance to RoHS 2002/95/EC and WEEE 2002/96EC
Applications
* Printers, fax machines, photocopiers, screen projectors * Telecommunication products (cellular phones, pagers) * Internet TV boxes, video conferencing systems * Medical and industrial data collection devices * * * * External infrared adapters (dongles) Data loggers GPS Kiosks, POS, Point and Pay devices including IrFM - applications
Parts Table
Part TFDU4100-TR3 TFDU4100-TT3 Description Oriented in carrier tape for side view surface mounting Oriented in carrier tape for top view surface mounting 1000 pcs 1000 pcs Qty / Reel
Document Number 82514 Rev. 1.6, 05-Dec-05
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TFDU4100
Vishay Semiconductors Functional Block Diagram
V CC1
V CC2 Driver Amplifier Comparator RXD R1
SC
AGC Logic
IRED Anode
TXD Open Collector Driver
IRED Cathode
GND
14876
Pin Description
Pin Number 1 2 3 4 Function IRED Anode IRED Cathode TXD RXD Description IRED anode, should be externally connected to VCC2 through a current control resistor IRED cathode, internally connected to driver transistor Transmit Data Input Received Data Output, open collector. No external pull-up or pull-down resistor is required (20 k resistor internal to device). Output data is invalid during transmission. No internal connection Supply Voltage Sensitivity control Ground I HIGH I O HIGH LOW I/O Active
5 6 7 8
NC VCC1 SC GND
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Document Number 82514 Rev. 1.6, 05-Dec-05
TFDU4100
Vishay Semiconductors Pinout
TFDU4100 weight 200 mg
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s
IRED Detector
"U" Option BabyFace (Universal)
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.A new version of the standard in any case obsoletes the former version.
1
17087
2 34 56
78
Absolute Maximum Ratings
Reference point Ground (pin 8) unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Supply voltage range Input current Output sink current Power dissipation Junction temperature Ambient temperature range (operating) Storage temperature range Soldering temperature Average IRED current Repetitive pulsed IRED current IRED anode voltage Transmitter data input voltage Receiver data output voltage t < 90 s, ton < 20 % see recommended solder profile IIRED(DC) IIRED(RP) VIREDA VTXD VRXD - 0.5 - 0.5 - 0.5 see derating curve PD TJ Tamb Tstg - 25 - 25 Test Conditions 0 V VCC2 6 V 0 V VCC1 6 V for all pins, except IRED anode pin Symbol VCC1 VCC2 Min - 0.5 - 0.5 Typ. Max +6 +6 10 25 200 125 + 85 + 85 260 100 500 +6 VCC1 + 0.5 VCC1 + 0.5 Unit V V mA mA mW C C C C mA mA V V V
Eye safety information
Parameter Virtual source size Maximum intensity for class 1
*)
Test Conditions Method: (1-1/e) encircled energy IEC60825-1 or EN60825-1, edition Jan. 2001
Symbol d Ie
Min 2.5
Typ. 2.8
Max
Unit mm
*)
mW/sr
(500)**)
The device is a "class 1" device. IrDA specifies the max. intensity with 500 mW/sr.
**)
Document Number 82514 Rev. 1.6, 05-Dec-05
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TFDU4100
Vishay Semiconductors Electrical Characteristics Transceiver
Tamb = 25 C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Supported data rates Supply voltage Test Conditions base band receive mode transmit mode, R2 = 47 (see recommended application circuit) Supply current pin VCC1 (receive VCC1 = 5.5 V mode) VCC1 = 2.7 V Supply current pin VCC1 (avg) IIRED = 210 mA (at IRED anode (transmit mode), 20% duty cycle pin), VCC1 = 5.5 V IIRED = 210 mA (at IRED anode pin), VCC1 = 2.7 V Leakage current of IR emitter, IRED anode pin Transceiver power on settling time VCC1 = OFF, TXD = LOW, VCC2 = 6 V, T = - 25 to + 85 C VCC1 VCC2 Symbol Min 2.4 2.7 2.0 Typ. Max 115.2 5.5 5.5 Unit kbit/s V V
ICC1(Rx) ICC1(Rx) ICC1(Tx) ICC1(Tx) IL(IREDA) TPON
1.3 1.0 5.0 3.5 0.005
2.5 1.5 5.5 4.5 0.5 50
mA mA mA mA A s
Optoelectronic Characteristics Receiver
Tamb = 25 C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Minimum detection threshold irradiance Test Conditions BER < 10- 8 (IrDA specification) = 15 , SC = LOW, SIR = 15 , SC = HIGH, SIR Maximum detection threshold irradiance Logic LOW receiver input irradiance Output voltage - RXD = 90 , VCC1 = 5.0 V = 90 , VCC1 = 3.0 V Note: No detection below this input irradiance Active, C = 15 pF, R = 2.2 k non-active, C = 15 pF, R = 2.2 k Output current - RXD Rise time - RXD VOL < 0.8 V active to inactive C = 15 pF, R = 2.2 k to VCC1 active to inactive C = 15 pF, internal load only Fall time - RXD inactive to active C = 15 pF, R = 2.2 k to VCC1 inactive to active C = 15 pF, internal load only Ee Ee Ee Ee Ee VOL VOH IOL tr(RXD) tr(RXD) tf(RXD) tf(RXD) 20 20 20 20 VCC1 - 0.5 4 200 1400 200 200 6 3.3 8 4 0.5 0.8 20 10 5 15 35 15 mW/m2 mW/m2 kW/m2 kW/m2 mW/m2 V V mA ns ns ns ns Symbol Min Typ. Max Unit
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Document Number 82514 Rev. 1.6, 05-Dec-05
TFDU4100
Vishay Semiconductors
Parameter Pulse width - RXD output Jitter, leading edge of output signal Latency over a period of 10 bit, 115.2 kbit/s Test Conditions Symbol tPW ti tL 100 Min 1.63 Typ. 4 Max 4.3 2 500 Unit s s s
Transmitter
Tamb = 25 C, VCC = 2.7 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter IRED operating current Test Conditions IRED operating current can be adjusted by variation of R1. Current limiting resistor is in series to IRED: R1 = 14 , VCC2 = 5.0 V Symbol Id Min Typ. 0.2 Max 0.28 Unit A
Logic LOW transmitter input voltage Logic HIGH transmitter input voltage Output radiant intensity In agreement with IEC825 eye safety limit, if current limiting resistor is in series to IRED: R1 = 14 , VCC2 = 5.0 V, = 15 TXD logic LOW level Angle of half intensity Peak wavelength of emission Half-width of emission spectrum Optical rise time, fall time Optical overshoot Rising edge peak-to-peak jitter of optical output pulse Over a period of 10 bits, independent of information content
VIL(TXD) VIH(TXD) Ie
0 2.4 45 140
0.8 VCC1 + 0.5 200
V V mW/sr
Ie p tropt, tfopt tj 880 45 200 24
0.04 900 600 25 0.2
mW/sr nm nm ns % s
Document Number 82514 Rev. 1.6, 05-Dec-05
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TFDU4100
Vishay Semiconductors Recommended Circuit Diagram
The only required components for designing an IrDA compatible application using Vishay Semiconductors SIR transceivers are a current limiting resistor to the IRED. However, depending on the entire system design and board layout, additional components may be required (see figure 1). It is recommended that the capacitors C1 and C2 are positioned as near as possible to the transceiver power supply pins. A tantalum capacitor should be used for C1, while a ceramic capacitor should be used for C2 to suppress RF noise. Also, when connecting the described circuit to the power supply, low impedance wiring should be used.
(R)
eye safety limitations given by IEC825.1. R2, C1 and C2 are optional and dependent on the quality of the supply voltage VCC1 and injected noise. An unstable power supply with dropping voltage during transmission may reduce sensitivity (and transmission range) of the transceiver.
500 450 400
Intensity (mW/sr)
Vcc = 5.25 V, max. efficiency, center, min. VF, min. VCEsat
350 300 250 200 150 100 50 Vcc = 4.75 V, min. efficiency, 15 off axis, max. VF, max. VCEsat
VCC2 VCC1 R1 IRED Cathode RXD IRED Anode TXD
0 6
14377
R2 RXD
8 10 12 14 Current Control Resistor ( )
16
TFDx4x00
C1 GND SC TXD
18092
C2
VCC1/SD GND
SC NC
Figure 2. Ie vs. R1
Note: outlined components are optional depending on the quality of the power supply
Figure 1. Recommended Application Circuit
R1 is used for controlling the current through the IR emitter. For increasing the output power of the IRED, the value of the resistor should be reduced. Similarly, to reduce the output power of the IRED, the value of the resistor should be increased. For typical values of R1 (see figures 2 and 3), e.g. for IrDA compliant operation (VCC2 = 5 V 5 %), a current control resistor of 14 is recommended. The upper drive current limitation is dependent on the duty cycle and is given by the absolute maximum ratings on the data sheet and the
14378
760 720 Vcc=3.3 V, max. intensity on 680 axis, min. VF, min. VCEsat 640 600 560 520 480 440 400 360 320 280 240 Vcc = 2.7 V, min. intensity 200 15 off axis, max. VF, 160 max. VCEsat 120 80 40 0 0 1 2 3 4 5 6 7 8 Current Control Resistor ( )
Intensity (mW/sr)
Figure 3. Ie vs. R1
Table 1. Recommended Application Circuit Components
Component C1 C2 R1 R2 Recommended Value 4.7 F, Tantalum 0.1 F, Ceramic 14 , 0.25 W (recommended using two 7 M, 0.125 W resistor in series, (VCC2 = 5 V) 47 , 0.125 W Vishay Part Number 293D 475X9 016B 2T VJ 1206 Y 104 J XXMT CRCW-1206-7R00-F-RT1 CRCW-1206-47R0-F-RT1
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Document Number 82514 Rev. 1.6, 05-Dec-05
TFDU4100
Vishay Semiconductors
The sensitivity control (SC) pin allows the minimum detection irradiance threshold of the transceiver to be lowered when set to a logic HIGH. Lowering the irradiance threshold increases the sensitivity to infrared signals and increases transmission range up to 3 meters. However, setting the Pin SC to logic HIGH also makes the transceiver more susceptible to transmission errors due to an increased sensitivity to fluorescent light disturbances. It is recommended to set the Pin SC to logic LOW or left open if the increased range is not required or if the system will be operating in bright ambient light. off from the regulated power supply (see figure 5). The additional component cost is minimal and saves the system designer additional power supply costs.
IIRED Power Supply + - Regulated Power Supply 50 mA
R1 IRED Anode
Microcontroller or Microprocessor 20 mA
IS VCC1/SD
Shutdown
The internal switch for the IRED in Vishay Semiconductors SIR transceivers is designed to be operated like an open collector driver. Thus, the VCC2 source can be an unregulated power supply while only a well regulated power source with a supply current of 1.3 mA connected to VCC1/SD is needed to provide power to the remainder of the transceiver circuitry in receive mode. The term VCC1/SD is used here for the power supply pin to indicate that VCC1 can be switched off independently to shut down the transceiver. It is allowed to keep the power supply connected to the IRED Anode. In transmit mode, the current at VCC1 is slightly higher (approximately 4 mA average at 3 V supply current) and the voltage is not required to be kept as stable as in receive mode. A voltage drop of VCC1 is acceptable down to about 2.0 V when buffering the voltage directly from the Pin VCC1 to GND see figure 1). This configuration minimizes the influence of high current surges from the IRED on the internal analog control circuitry of the transceiver and the application circuit. Also board space and cost savings can be achieved by eliminating the additional linear regulator normally needed for the IRED's high current requirements. The transceiver can be very efficiently shutdown by keeping the IRED connected to the power supply VCC2 but switching off VCC1/SD. The power source to VCC1/SD can be provided directly from a microcontroller (see figure 4). In shutdown, current loss is realized only as leakage current through the current limiting resistor to the IRED (typically 5 nA). The settling time after switching VCC1/SD on again is approximately 50 s. Vishay Semiconductors' TOIM4232 interface circuit is designed for this shutdown feature. The VCC_SD, S0 or S1 outputs on the TOIM4232 can be used to power the transceiver with the necessary supply current. If the microcontroller or the microprocessor is unable to drive the supply current required by the transceiver, a low-cost SOT23 pnp transistor can be used to switch voltage on and
Document Number 82514 Rev. 1.6, 05-Dec-05
TFDU4100 (Note: Typical Values Listed) Receive Mode @ 5 V: IIRED = 210 mA, IS = 1.3 mA @ 2.7 V: IIRED = 210 mA, IS = 1.0 mA Transmit Mode @ 5 V: IIRED = 210 mA, IS = 5 mA (Avg.) @ 2.7 V: IIRED = 210 mA, IS = 3.5 mA (Avg.)
14878
Figure 4.
IIRED Power Supply + - Regulated Power Supply 50 mA R1 IRED Anode Microcontroller or Microprocessor 20 mA IS VCC1/SD
TFDU4100 (Note: Typical Values Listed) Receive Mode @ 5 V: IIRED = 210 mA, IS = 1.3 mA @ 2.7 V: IIRED = 210 mA, IS = 1.0 mA Transmit Mode @ 5 V: IIRED = 210 mA, IS = 5 mA (Avg.) @ 2.7 V: IIRED = 210 mA, IS = 3.5 mA (Avg.)
14879
Figure 5.
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TFDU4100
Vishay Semiconductors Recommended Solder Profiles for TFDU4100
Solder Profile for Sn/Pb soldering
260 240 220 200 180
10 s max. @ 230 C 240 C max.
2...4 C/s 160 C max.
160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350
120 s...180 s
90 s max.
2...4 C/s
Lead Free, Recommended Solder Profile The TFDU4100 is a lead-free transceiver and qualified for lead-free processing. For lead-free solder paste like Sn-(3.0 - 4.0)Ag(0.5 - 0.9)Cu, there are two standard reflow profiles: Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown below in figure 7 is Vishay's recommended profile for use with the TFDU4100 transceivers. For more details please refer to Application note: SMD Assembly Instruction.
19431
Temperature/C
Time/s
Figure 6. Recommended Solder Profile for Sn/Pb soldering
275 250 225 200 Temperature/C 175 150 125 100 75 50 25 0 0
19532_1
T 255 C for 10 s....30 s T 217 C for 70 s max
Tpeak = 260 C
30 s max. 90 s...120 s 70 s max. 2C...4C/s 2C...3C/s
50
100
150 200 Time/s
250
300
350
Figure 7. Solder Profile, RSS Recommendation
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Document Number 82514 Rev. 1.6, 05-Dec-05
TFDU4100
Vishay Semiconductors
280 260 240 220 200
Tpeak = 260 C max
Temperature/C
180 160 140 120 100 80 60 40 20 0 0 50 100 150
<4 C/s 1.3 C/s Time above 217 C t 70 s Time above 250 C t 40 s Peak temperature Tpeak = 260 C
<2 C/s
200
250
300
Time/s
Figure 8. Solder Profile, RTS Recommendation
A ramp-up rate less than 0.9 C/s is not recommended. Ramp-up rates faster than 1.3 C/s damage an optical part because the thermal conductivity is less than compared to a standard IC.
Current Derating Diagram
600 Peak Operating Current (mA) 500 400 300 200 100 0 -40 -20 0
14880 Current derating as a function of the maximum forward current of IRED. Maximum duty cycle: 25 %.
20 40 60 80 100 120 140 Temperatur (5 C)
Figure 9. Current Derating Diagram
Document Number 82514 Rev. 1.6, 05-Dec-05
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TFDU4100
Vishay Semiconductors Package Dimensions
7x1=7 0.6
2.5 1 1 8
18470
Figure 10. Package drawing and solder footprint TFDU4100, dimensions in mm, tolerance 0.2 mm if not otherwise mentioned
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Document Number 82514 Rev. 1.6, 05-Dec-05
TFDU4100
Vishay Semiconductors Reel Dimensions
14017
Tape Width mm 24
A max. mm 330
N mm 60
W1 min. mm 24.4
W2 max. mm 30.4
W3 min. mm 23.9
W3 max. mm 27.4
Document Number 82514 Rev. 1.6, 05-Dec-05
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TFDU4100
Vishay Semiconductors Tape Dimensions
19824
Drawing-No.: 9.700-5251.01-4 Issue: 3; 02.09.05 Figure 11. Tape drawing, TFDU4100 for top view mounting, tolerance 0.1 mm
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Document Number 82514 Rev. 1.6, 05-Dec-05
TFDU4100
Vishay Semiconductors
19875
Drawing-No.: 9.700-5297.01-4 Issue: 1; 08.04.05 Figure 12. Tape drawing, TFDU4100 for side view mounting, tolerance 0.1 mm
Document Number 82514 Rev. 1.6, 05-Dec-05
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TFDU4100
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 82514 Rev. 1.6, 05-Dec-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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